مشروع البحث: Experimental investigation of SF6–O2 plasma for the advancement of the anisotropic Si etch process
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المساهمين
الممولين
رقم التعريف
192
الباحث
خالد الشلتمي
الوصف
In semiconductor production, the wafers should be processed in different chambers which are readily available, rather than waiting for the right chamber. To avoid these time delays, and the associated cost, chamber matching is generally carried out. This study examines the impact of varying the concentrations of oxygen/fluorine and the operating pressure in an SF6–O2 plasma in two capacitively coupled plasma etch chambers with different geometries. Silicon wafers were used to investigate the anisotropic nature of the etch profiles. The oxygen and fluorine concentrations were measured via optical emission spectroscopy using the actinometry technique, which requires the electron energy distribution function to remain unchanged under the different plasma conditions employed in this work. A Langmuir probe was used to investigate the electron energy distribution function where the chamber pressure, power and process duration were kept constant, and the oxygen concentration was varied from 0 to 60%. The results showed that in both chambers the atomic concentrations of fluorine increased rapidly when the percentage of oxygen in the SF6 plasma was increased to 20%, and decreased with further addition of oxygen
الكلمات الدالة
Experimental investigation of SF6–O2 plasma for the advancement of the anisotropic Si etch process